Resonant tunneling in graphene-ferroelectric-graphene junctions

We study tunnel junctions consisting of a two-dimensional ferroelectric (FE) material sandwiched between graphene electrodes. formulate theory for the interplay FE polarization and induced free charges in such devices, taking into account quantum capacitance effects. predict gate-sensitive voltage difference across device, which can be measured using electrostatic force microscopy. Incorporating this tunneling current-voltage characteristics, we identify resonance peak associated with aligned Dirac cones as highly sensitive probe junction. This opens way device applications few atom-thick layers acting readable ultra-high-density memory.